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VE3006技术参数解决文案EMERSON

型号: VE3006


Due to the way the Modicon Quantum HSBY system works, you will need to have the same number of PTQ-PDPMV1 modules in each chassis with each HSBY CPU.  In other words, if you put four (4) in one chassis, you must also have four (4) in the other chassis.  This is required because the PTQ-PDPMV1 modules can talk only to the CPU in the chassis in which they are installed.  They cannot talk to a CPU in another chassis, even if it is the primary CPU.支持HSBY的PTQ-PDPMV1的0个固件版本是1.15版。该版本以及1.25版之前的后续版本只能支持每个HSBY CPU机箱一(1)个PTQ-PPDPMV1模块。从1.25版及更高版本开始,每个HSBY机箱0多可以有四(4)个PTQ-PDPMV1模块。
VE3006技术参数解决文案EMERSON VE3006技术参数解决文案EMERSON VE3006技术参数解决文案EMERSON VE3006技术参数解决文案EMERSON VE3006技术参数解决文案EMERSON




由于Modicon Quantum HSBY系统的工作方式,您需要在每个具有HSBY CPU的机箱中具有相同数量的PTQ-PDPMV1模块。换言之,如果您在一个机箱中放置四(4)个,那么在另一个机箱内也必须有四个。这是必需的,因为PTQ-PDPMV1模块只能与安装它们的机箱中的CPU通信。即使是主CPU,它们也无法与另一机箱中的CPU通信。The ProSoft ProTalkQ PTQ-PDPMV1 PROFIBUS Master solution is supplied with a comDTM driver that allows it to be used with any PROFIBUS device management software that uses comDTM technology.  Examples of such software are PACTware and Endress+Hauser Field Care.

Siemens Simatic PDM software uses a competing technology and does not support or use comDTM technology. Therefore, Siemens Simatic PDM software is not compatible with and cannot be used with the PTQ-PDPMV1 ProSoft solution.

ProSoft ProTalkQ PTQ-PDPMV1 PROFIBUS主解决方案提供了一个comDTM驱动程序,允许它与任何使用comDTM技术的PROFIBUS-设备管理软件一起使用。此类软件包括PACTware和Endress+Hauser Field Care。



西门子Simatic PDM软件使用竞争技术,不支持或使用comDTM技术。因此,西门子Simatic PDM软件与PTQ-PDPMV1 ProSoft解决方案不兼容,也不能与之配合使用。While the PTQ-PDPMV1 is very similar in capability and performance to the older Modicon 140 CRP 811 00 module, it is not a direct, drop-in replacement.

If you wish to replace a CRP with the PTQ, there will be some project modifications required to get it all working.  The type and extent of modifications will depend on the complexity of your existing Quantum application.虽然PTQ-PDPMV1在功能和性能上与旧款Modicon 140 CRP 811 00模块非常相似,但它不是直接的直接替换。



如果您希望用PTQ替换CRP,则需要进行一些项目修改才能使其全部正常工作。修改的类型和范围将取决于您现有Quantum应用程序的复杂性。The 1394-SJT22-A is 1394 GMC Turbo System Module that is part of Allen-Bradley’s 1394 Multi Axis Motion control system. This system module is basically used in analog servo system and provides a digital servo drive with +/- 10VDC interface.

System modules are installed at the leftmost of a 1394 assembly which includes axis module, bus connector and terminating resistor. Each module is installed through a slide-lock mechanism and fasteners that align exactly with each other.

This system module is built with an RS232 / 422 communication and supports DH485 communication protocol. It may be optionally installed with a Remote I/O communication (RIO) and AxisLink communication interfaces.

When mounting this system module or any other product within the 1394 systems, the installation location’s ambient temperature must not be greater than 50.0 Deg. Celsius and mounted on a flat, stable vertical surface. The installation panel must have minimal shock and vibration while the environment must be clear with moisture, oil, dust and corrosive gasses.

This system module does not come with an internal shunt resistor. External shunt module must be mounted. The compatible shunt resistors include Allen-Bradley manufactured 1394-SR9A, -SR9AF, -SR36A or -SR36AF. The shunt module generates a significant amount of heat. As warm air naturally goes up, instruments or components that may be affected by warm air must not be mounted on top of the external shunt module. The Top clearance must measure 254 mm (10.0 inches), 155 mm (6.1 inches) for both sides including bottom area of the system module.

The 1394-SJT22-A module is a GMC Turbo system module from Allen-Bradley/Rockwell Automation. The module features a 32-bit central processing unit. Also, it features a +/-10 Volts DC analog input. The module is powered by an AC power supply with a voltage rating of between 380 Volts AC and 460 Volts AC at a frequency of 50 to 60 Hertz. The nominal power output of 17 to 22 kilowatts while its bus voltage is rated at 530 Volts DC to 680 Volts DC. When the 1394-SJT22-A system module is being interfaced with an external axis drive, the 1394-DIM drive interface module is recommended. The drive interface module acts as an interface between the 1394-SJT22-A module and the external axis drive. The Allen-Bradley 1394-SJT22-A module belongs to the Allen-Bradley 1394 modular multi-axis motion control and drive system family. The module, like others in this family, provides a direct connection line for 3-phase input power, efficient IGBT power conversion, and a slide-and-lock module-to-module connection system. Depending on the system module that is used, the maximum of axis that can be supported is 4 axis. where axis can be interfaced to a motor. The Allen-Bradley 1394-SJT22-A module is completely programmable and supports configuration with the graphical motion control language (GML). Additionally, the module supports standard communication options such as the RS-232, RS-422, and DH-485 options. By having a turbo option, the 1394-SJT22-A module executes programs much faster compared to standard modules in the same family.
IS200STCIH2A标准

IS200STCIH2A是Mark VIE端子板。该板用外部I/O端接。这主要用于GE Speedtronic Mark VIE系列。此外,Mark VIE是一个灵活的多应用平台。它还为单工、双冗余和三冗余系统提供高速网络I/O。



IS200STCIH2A是一种填充有SMD组件和连接器的多层PCB。接线板的一部分是可拆卸连接器。STCI端子板也有不同版本。



可靠性



IS200STCIH2A板非常可靠,因此不易损坏。但操作不当和存储不良会影响卡的功能。因此,我们建议在建议的条件下将卡存放在静电敏感存储箱中IS200STCIH2A是GE根据Mark VI系列开发的单触点输入端子板。Simplex Contact Input端子板是一种小触点输入端子板,设计用于DIN导轨或平面安装。该板接受来自外部电源的24触点输入,标称24、48和125 V dc励磁。触点输入具有噪声抑制功能,以防止浪涌和高频噪声。PAIC I/O块与模块兼容。I/O块插入D型连接器,并通过以太网与控制器通信。仅支持单工系统。



IS200STCIH2A安装

STCI与塑料绝缘体一起安装在钣金托架上,然后将其安装在DIN导轨上。

STCI加绝缘体可以安装在金属板组件上,然后用螺栓固定在机柜中。触点输入通常使用#18 AWG电线直接连接至接线板。

护罩应端接在单独的支架上。STCIH2有一个直角集管,可接受各种商用可插拔接线端子,共52个端子。

活动

功能和车载信号调节与TBCI上的相同,但它们适用于24、48和125 V dc励磁。输入励磁范围分别为16至32 V dc、32至64 V dc和100至145 V dc。阈值电压为励磁电压的50%。图中显示了触点感应电路。在前21个电路上,触点输入电流限制为2.5 mA,在电路22至24上限制为10 mA。

通过重置聚合物正温度系数保险丝,24 V直流电源的电流限制为0.5 A。滤波器可降低高频噪声,并抑制信号输入点附近每个输入端的浪涌。离散输入电压信号被路由到I/O处理器,后者将其转换为数字信号并发送给控制器。

IS200STCIH2A特性

E1和E2是端子板两侧端子环上的标签。

一个37针(内螺纹)D型连接器和一个三位内螺纹插头与电路板上的端子排相对。

在木板的短边上,在木板上切下两个圆孔,一个相对另一个。板上还有80多个电阻器、电容器、二极管和单个集成电路。

产品属性

可用通道数-24个干接触电压输入通道。

标称励磁电压为24 V dc,浮动,范围为18.5至32 V dc(可插拔TB)

电流输入-对于需要24 V dc的应用:前21个电路消耗2.5 mA,而0后三个消耗10 mA。

输入硬件滤波器,4 ms

I/O板故障检测-触点输入处的励磁电压损失,在测试模式下不响应的触点输入

GE Speedtronic Mark VIe控制器更换部件的0广泛分类可在控制世界找到。我们的专家可以随时帮助您满足Mark VIe要求。369-HI-0-M-0-0-E is a motor management relay that is manufactured by GE Multilin. The control power is 50-300 VDC / 40-265 VAC. There are no optional RTD inputs on this relay. This unit includes an optional metering package. There is no optional fiber optic port. This relay provides protection and monitoring for 3-phase motors and their associated systems. The 369 can ‘learn’ individual motor parameters and adapt itself to individual applications. In order to improve the protective capabilities of the relay, the user may adjust the motor inrush current, the cooling rates, and/or the acceleration time. If you have any questions about this motor management relay or the associated series or manufacturer, please contact AX Control.

The setpoints key allows the user to navigate through the programmable parameters page headers. The actual values key allows the user to navigate through the measured parameters page headers. The page up and down keys can be used to scroll through page headers for both actual values and setpoints. The line up and down keys can be used to scroll through the subheadings. The value up and down keys allow the user to scroll through variables in the setpoint programming mode. The reset key allows the user to reset a trip or latched alarm. The enter key can enter the subgroups or store altered setpoint values. The clear key can exit the subgroups or return an altered setpoint to its original value. The help key may be pressed at any time for context sensitive help messages.

You should always make sure to properly ground the 369-HI-0-M-0-0-E.   You must connect both the Safety ground and the Filter ground (terminal 126 and 123 respectively) to the main Ground Bus to properly ground the unit.   

Frequently Asked Questions about 369-HI-0-M-0-0-E
What are the control power specifications of the 369-LO-0-M-F-E-0-E motor management relay?
The 369-LO-0-M-F-E-0-E has a low (LO) control power specification. The VDC range is from 20-60 and the VAC control power range for this 369 Multilin motor management relay is 20 to 48. This low specification is in comparison to the high (HI) option, which is 50-300 VDC and 60 to 265 VAC control power.
What additional features are present for the 369-LO-0-M-F-E-0-E Multilin General Electric digital relay?
Additional features of the 369-LO-0-M-F-E-0-E are the optional metering package. This package provides three extra configurable analog outputs in addition to the base unit's single analog output. This package also provides the unit with inputs for power and voltage elements with the ability to meter various specifics such as V, kW, etc. 
The 369-LO-0-M-F-E-0-E also contains the optional fiber optic port denoted by the (F) option. This data link for the fiber optic is for more harsh environments or for RRTD hook up. The fiber sizes are 50/125, 62.5/125, 100/140, and 200 micrometers. The type of LED emitter is a 820 nm LED with multimode features. 
What is the purpose of the optional fiber optic port for the 369-LO-0-M-F-E-0-E?
The purpose of the fiber optic port (option F) for the 369-LO-0-M-F-E-0-E is to allow a remote module RTD to hookup to the motor management relay.369-HI-0-M-0-0-E是GE Multilin制造的电机管理继电器。控制电源为50-300 VDC/40-265 VAC。此继电器上没有可选RTD输入。该装置包括一个可选的计量包。没有可选的光纤端口。该继电器为三相电机及其相关系统提供保护和监控。369可以“学习”各个电机参数,并适应各个应用。为了提高继电器的保护能力,用户可以调整电机浪涌电流、冷却速度和/或加速时间。如果您对该电机管理继电器或相关系列或制造商有任何疑问,请联系AX Control。



设定点键允许用户浏览可编程参数页面标题。实际值键允许用户浏览测量参数页面标题。页面向上和向下键可用于滚动页面标题,查看实际值和设定点。上下对齐键可用于滚动浏览副标题。值向上和向下键允许用户滚动浏览设定点编程模式中的变量。重置键允许用户重置跳闸或锁定报警。输入键可以输入子组或存储更改的设定值。清除键可以退出子组或将更改的设定点返回到其原始值。对于上下文相关的帮助消息,可以随时按帮助键。



应始终确保369-HI-0-M-0-0-E正确接地。必须将安全接地和过滤器接地(分别为端子126和123)连接到主接地母线,以正确接地装置。



关于369-HI-0-M-0-0-E的常见问题

369-LO-0-M-F-E-0-E电机管理继电器的控制电源规格是什么?

369-LO-0-M-F-E-0-E具有低(LO)控制功率规格。VDC范围为20-60,此369 Multilin电机管理继电器的VAC控制功率范围为20至48。此低规格与高(HI)选项相比,后者为50-300 VDC和60-265 VAC控制电源。

369-LO-0-M-F-E-0-E Multilin General Electric数字继电器有哪些附加功能?

369-LO-0-M-F-E-0-E的其他功能是可选的计量包。除了基本单元的单个模拟输出外,该软件包还提供三个额外的可配置模拟输出。该软件包还为装置提供了功率和电压元件的输入,能够测量各种具体参数,如V、kW等。

369-LO-0-M-F-E-0-E还包含由(F)选项表示的可选光纤端口。此光纤数据链路用于更恶劣的环境或RRTD连接。光纤尺寸为50/125、62.5/125、100/140和200微米。LED发射器类型为820 nm LED,具有多模特性。

369-LO-0-M-F-E-0-E的可选光纤端口的用途是什么?

369-LO-0-M-F-E-0-E的光纤端口(选项F)的用途是允许远程模块RTD连接到电机管理继电器。The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET. We have already discussed in detail about the working of BJT and the working of MOSFET and how they are used in circuits. But, both these components had some limitations to be used in very high current applications. So, we moved another popular power electronic switching device called the IGBT. You can think of IGBT as a fusion between BJT and MOSFET, these components have the input characteristics of a BJT and output characteristics of a MOSFET.  In this article, we get familiar with the basics of IGBT, how they work, and how to use them in your circuit designs. 

 IGBT is the short form of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). The typical symbol of IGBT  along with its image is shown below.As mentioned earlier an IGBT is a fusion between a BJT and MOSFET.  The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

 IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.Since IGBT is the combination of MOSFET and BJT they are also called by different names. The different names of IGBT are  Insulated Gate Transistor( IGT), Metal Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field Effect Transistor (COMFET).IGBT has three terminals attached to three different metal layers, the metal layer of the gate terminal is insulated from the semiconductors by a layer of silicon dioxide (SIO2).  IGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers. The junction between the p+ layer and n- layer is called the junction J2 and the junction between the n- layer and the p layer is called the junction J1. The structure of IGBT is shown in the figure understand the working of the IGBT, consider a voltage source VG connected positively to the Gate terminal with respect to the Emitter. Consider other voltage source VCC connected across The Emitter and the Collector, where Collector is kept positive with respect to the Emitter. Due to the voltage source VCC the junction J1 will be forward-biased whereas the junction J2 will be reverse biased. Since J2 is in reverse bias there will not be any current flow inside the IGBT(from collector to emitter).

 

Initially, consider that there is no voltage applied to the Gate terminal, at this stage the IGBT will be in a non-conductive state. Now if we increase the applied gate voltage, due to the capacitance effect on the SiO2 layer the negative ions will get accumulated on the upper side of the layer and the positive ions will get accumulated on the lower side of the SiO2 layer. This will cause the insertion of negative charge carriers in the p region,  higher the applied voltage VG greater the insertion of negatively charged carriers. This will lead to a formation of the channel between the J2 junction which allows the flow of current from collector to emitter. The flow of current is represented as the current path in the picture, when the applied Gate voltage VG increases the amount of current flow from the collector to the emitter also increases.The IGBT is classified as two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).

 

Based on their characteristics the NPT- IGBT, and PT-IGBT are named as symmetrical and nonsymmetrical IGBTs. The symmetrical IGBTs are the ones that have equal forward and reverse breakdown voltage. The asymmetric IGBTs are the ones that have a reverse breakdown voltage less than the forward breakdown voltage. The symmetrical IGBTs are mostly used in AC circuits, whereas the asymmetrical IGBTs are mostly used in DC circuits because they don’t need to support voltage in the reverse direction.The collector of the PNP transistor is connected to the NPN transistor through a JFET, the JFET connects the collector of the PNP transistor and the base of the PNP transistor. These transistors are arranged in a way to form a parasitic thyristor set up to create a negative feedback loop. The Resistor RB is placed to short the base and emitter terminals of the NPN transistor to ensure that the thyristor doesn’t latch-up which leads to the latch-up of the IGBT. The JFET used here will signify the structure of current between any two IGBT cells and allows the MOSFET and supports most of the voltage.

 369-HI-0-M-0-0-0-E-GE通气
可编程序控制器的英文为Programmable Controller,在二十世纪70-80年代一直简称为PC。由于到90年代,个人计算机发展起来,也简称为PC;加之可编程序的概念所涵盖的范围太大,所以美国AB公司将可编程序控制器定名为可编程序逻辑控制器(PLC-Programmable Logic Controller),为了方便,仍简称PLC为可编程序控制器。有人把可编程序控制器组成的系统称为PCS可编程序控制系统,强调可编程序控制器生产厂商向人们提供的已是完整的系统了。
PLC的发展和市场情况
PLC的发展历史
1968年美国GM(通用汽车)公司提出取代继电器控制装置的要求,二年美国数字公司研制出了代可编程序控制器,满足了GM公司装配线的要求。随着集成电路技术和计算机技术的发展,现在已有五代PLC产品了。
在以改变几何形状和机械性能为特征的制造工业和以物理变化和化学变化将原料转化成产品为特征的过程工业中,除了以连续量为主的反馈控制外,特别在制造工业中存在了大量的开关量为主的开环的顺序控制,它按照逻辑条件进行顺序动作号按照时序动作;另外还有与顺序、时序无关的按照逻辑关系进行连锁保护动作的控制;以及大量的开关量、脉冲量、计时、计数器、模拟量的越限报警等状态量为主的—离散量的数据采集监视。由于这些控制和监视的要求,所以PLC发展成了取代继电器线路和进行顺序控制为主的产品。在多年的生产实践中,逐渐形成了PLC、DCS与IPC三足鼎立之势,还有其它的单回路智能式调节器等在市场上占一定的百分比。
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