Initially, consider that there is no voltage applied to the Gate terminal, at this stage the IGBT will be in a non-conductive state. Now if we increase the applied gate voltage, due to the capacitance effect on the SiO2 layer the negative ions will get accumulated on the upper side of the layer and the positive ions will get accumulated on the lower side of the SiO2 layer. This will cause the insertion of negative charge carriers in the p region, higher the applied voltage VG greater the insertion of negatively charged carriers. This will lead to a formation of the channel between the J2 junction which allows the flow of current from collector to emitter. The flow of current is represented as the current path in the picture, when the applied Gate voltage VG increases the amount of current flow from the collector to the emitter also increases.The IGBT is classified as two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).
Based on their characteristics the NPT- IGBT, and PT-IGBT are named as symmetrical and nonsymmetrical IGBTs. The symmetrical IGBTs are the ones that have equal forward and reverse breakdown voltage. The asymmetric IGBTs are the ones that have a reverse breakdown voltage less than the forward breakdown voltage. The symmetrical IGBTs are mostly used in AC circuits, whereas the asymmetrical IGBTs are mostly used in DC circuits because they don’t need to support voltage in the reverse direction.The collector of the PNP transistor is connected to the NPN transistor through a JFET, the JFET connects the collector of the PNP transistor and the base of the PNP transistor. These transistors are arranged in a way to form a parasitic thyristor set up to create a negative feedback loop. The Resistor RB is placed to short the base and emitter terminals of the NPN transistor to ensure that the thyristor doesn’t latch-up which leads to the latch-up of the IGBT. The JFET used here will signify the structure of current between any two IGBT cells and allows the MOSFET and supports most of the voltage.
英维思(3008, 3625, 3508E.3721, 3700A 4351B)
本特利(3500/42M， 3500/ 22M, 3500/ 95.3500/05)
黑马(F3330, F3236， F6217, F7126, F8621A)
福克斯波罗(FBM203, FBM204, FBM217, FMB231)
AB: (1746 1747 1756 1770 1771 1785触摸屏2711系列CPU PLC)
普罗索芙特PROSOFT MVI46/56/69, AB旗下，跟AB模块
瑞恩RELIANCE模块,卡件
飞利浦EPRO MMS6210/ 621…. PR6423/003-031
美尔托Meltal MT1102-02-00, MS3101-00-00, MS3102-01-00
横河YOKOGAWA AAI, ADV, ADI, ANB, AMM, SB, PW(型号开头),卡件模块(CPU,电源,输出，PLC)
摩尔MOORE Q开头, 3开头模块,像电视显示器
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